High Power Microwave Amplifier
DM-SC100-02; 2-6GHz GaN SSPA
- Wide-band,100W GaN SSPA
- Compact and lightweight at <0.75kg
- Pulsed and CW operation
- Ideal for electronic attack
This DM-SC100-02, 2-6GHz 100W GaN SSPA can operate in pulsed or CW modes and runs off a 28V supply with a linear gain of around 60dB. These amplifiers can be customised to suit other frequency ranges and interfaces.
Please contact us with your specific needs and for the latest specification, as it is subject to change without notice.
This high-power amplifier (HPA) employs gallium nitride (GaN) high-power transistors for output and driver stages. It is compact and lightweight with state-of-the-art power performance and a power-to-volume ratio we believe to be among the highest in the microwave industry for such product.
This SSPA/HPA is well suited to electronic warfare applications, particularly electronic attack (jamming), giving defence clients an alternative to the incumbent vacuum tube or traveling-wave tube amplifiers (TWTA). Its small size, weight and power (SWaP) means it is also particularly suited for use in UAV’s, Drones or Man-Portable systems. The DM-SC100-02 has demonstrated success with one of our EW clients in a man-portable jamming system.
Tailored Solutions.
- Electrical and mechanical interfaces can be tailored to meet individual specifications if required
- This amplifier is usually supplied without a heatsink or any thermal management assembly, however, we can provide tailored heat sinks and fans.
- This compact SSPA is addressable via an I2C bus which we use to align the amplifier, but this bus can also be used to interrogate the amplifier for internal currents, voltages and temperature. An expert user could be provided with a full set of alignment addresses.
Please contact us with your specific needs.
